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2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Motor Drive Applications Low drain-source ON-resistance High forward transfer admittance Enhancement mode : RDS (ON) = 90 m (typ.) : |Yfs| = 10 S (typ.) Unit: mm Low leakage current : IDSS = 100 A (max) (VDS = 250 V) : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 30 20 80 45 487 20 4.5 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA -- SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C / W C / W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 2.06 mH, RG = 25 , IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-21 2SK3994 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 200 V, VGS = 10 V, ID = 20 A Duty < 1%, tw = 10 s = VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min -- 30 -- 250 3.0 -- 5 -- -- -- Typ. -- -- -- -- -- 90 10 2090 280 1000 20 Max 10 -- 100 -- 5.0 105 -- -- -- -- -- pF Unit A V A V V m S Switching time Fall time 4.7 Turn-on time RL = 12.5 VGS 10 V 0V ID = 10 A -- VOUT -- 40 -- ns -- 10 -- VDD 125 V - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge -- -- -- -- 40 45 22 23 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / s Min -- -- -- -- -- Typ. -- -- -- 320 2.8 Max 20 80 -1.5 -- -- Unit A A V ns C Marking K3994 Part No. (or abbreviation code) Lot No. A line indicates a lead-free (Pb-free) package or lead-free (Pb-free) finish. 2 2006-11-21 2SK3994 ID - VDS 50 Common source Tc = 25C 40 Pulse test 9 30 15 10 100 9.5 Common source Tc = 25C 80 Pulse test ID - VDS 15 12 11 Drain current ID (A) Drain current ID (A) 8.5 60 10 20 8 7.5 40 9 10 VGS = 7 V 20 8 VGS = 7 V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 Common source 40 VDS = 10 V Pulse test 5 VDS - VGS Common source Tc = 25C 4 Pulse test Drain current ID (A) Tc = -55C 20 100 10 25 0 0 Drain-source voltage 30 VDS (V) 3 2 ID = 20 A 1 10 5 4 8 12 16 20 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 Common source 1 VDS = 10 V Pulse test Common source Tc = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs (S) 10 Tc = -55C 100 25 Drain-source ON-resistance RDS (ON) (m) 0.1 VGS = 10 V 15 1 0.1 0.1 1 10 100 0.01 1 10 100 Drain current ID (A) Drain current ID (A) 3 2006-11-21 2SK3994 RDS (ON) - Tc 0.3 1000 Common source VGS = 10 V Pulse test 10 5 0.18 ID = 20 A Common source IDR - VDS Drain-source ON-resistance RDS (ON) ( ) 0.24 (A) Tc = 25C Pulse test 100 0.12 Drain reverse current IDR 10 10 VGS = 0 V 0.06 5 0 -80 -40 0 40 80 120 160 1 0 3 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 30000 10000 6 Vth - Tc Vth (V) Gate threshold voltage Ciss Coss Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 100 Crss 1000 5 (pF) 4 Capacitance C 1000 3 2 Common source 1V DS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 100 10 0.1 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) Dynamic input/output characteristics 250 Common source ID = 20 A Tc = 25C Pulse test 20 VDS (V) 200 16 Drain-source voltage 50 V 100 VGS 50 100 V 8 4 0 0 20 40 60 80 0 100 Total gate charge Qg (nC) 4 2006-11-21 Gate-source voltage 150 VDD = 200 V 12 VGS (V) VDS 2SK3994 Safe operating area 100 max (pulse) EAS - Tch 500 00s * 1m s * 10 (mJ) Avalanche energy EAS 400 D max (continuous) 300 Drain current 1 DC operation Tc=25 200 100 0.1 Single nonrepetitive Ta=25 Curves must be derated linealy with increase in temperature. 1 10 0 25 m ax 100 1000 50 75 100 125 150 Channel temperature (initial) 0.01 Tch (C) Drain-source voltage 15 V -15 V BVDSS IAR VDD VDS Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD Test circuit RG = 25 VDD = 50 V, L = 2.06 mH 5 2006-11-21 2SK3994 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-21 |
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